Information technologies will be responsible for about 20% of electricity consumption worldwide by 2025, which urgently requires the development of new types of greener nanoelectronic devices. Spintronics, making use of not only the charge of electrons but also of its intrinsic angular momentum (its spin) is an emerging technology that can overcome some of these challenges […]
Spintronics developer NVE has expanded its line of smart magnetometers while also enjoying robust business growth and posting strong financial results for its recently completed fiscal year. The new SM223 is a high-sensitivity version of […]
Ever since graphene, a thin carbon sheet just one-atom thick, was discovered more than 15 years ago, the wonder material became a workhorse in materials science research. From this body of work, other researchers learned that slicing graphene along the edge of its honeycomb lattice creates one-dimensional zigzag graphene strips or nanoribbons with exotic magnetic properties […]
A tiny yet highly sensitive tunnel magnetoresistance current sensor has been introduced by spintronics developer NVE. The ACT001-10E is a high-sensitivity, inline analog sensor for AC or DC measurements. It is designed in an ultraminiature […]
NVE has recently introduced its most sensitive magnetometer sensor to date. The new ALT023 is a version of the popular ALT025 Tunneling Magnetoresistance (TMR) analog magnetometer with ten times the sensitivity. The ALT023 uses NVE’s revolutionary […]
NVE introduced the world’s first practical non-inductive gear-tooth sensors 25 years ago and is shaking up the market again with the world’s first tunneling magnetoresistance (TMR) gear-tooth sensors. With two channels to detect direction, the […]
Business growth in the spintronics and non-volatile magnetic memory market is turning the corner from Covid-19 while advancing into more applications, at least according to the fortunes of two key players, NVE Corporation and Everspin Technologies. Both companies develop non-volatile memory products, which do not have the traditional wear-out problems associated with some alternative memory technologies. […]
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