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Scientists Streamline Process for Controlling Spin in Magnetic Materials

Marking a major achievement in the field of spintronics, researchers at the U.S. Department of Energy’s (DOE) Brookhaven National Laboratory and Yale University have demonstrated the ability to control spin dynamics in magnetic materials by altering their thickness. The study, published recently in Nature Materials, could lead to smaller, more energy-efficient electronic devices. […]

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Avalanche Technology’s Next-Gen Magnetic Memory Uses Spin-Transfer Torque

Avalanche Technology, a developer of next generation magnetic random access memory (MRAM), continues to build its presence in the market for spin-transfer torque technology. In recent developments, the company is providing its Persistent SRAM (P-SRAM) for industrial touch screen applications developed by M2I Corporation and it […]

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NVE Introduces High-Sensitivity Nanopower TMR Magnetic Switches

Nanotech firm NVE Corporation, a developer of high-performance spintronics devices, has added two high-sensitivity models to its revolutionary ADT9xx-Series of tunneling magnetoresistance (TMR) magnetic switches. Fast, tiny and requiring little power, they provide attractive options for designers of battery-powered […]